Broadband solar photocells based on n-InSe

Abdinov A. S., Babayeva R., Nağıyev T.

International Journal of Modern Physics B, vol.39, no.21, 2025 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 39 Issue: 21
  • Publication Date: 2025
  • Doi Number: 10.1142/s0217979225501942
  • Journal Name: International Journal of Modern Physics B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, INSPEC, Metadex, zbMATH, Civil Engineering Abstracts
  • Keywords: Doping, induced impurity photoconductivity, macroscopic defects, negative photoconductivity, recombination centers, trapping centers
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

High-quality single crystals of n-Inse were grown by the vertical Bridgman method. The features of intrinsic, negative and induced impurity photoconductivity in undoped and doped with Holmium (Ho) and Erbium (Er) n-InSe single crystals were experimentally studied. The possibilities of creating, on the basis of these studied n-InSe single crystals, broadband (operating in the range of 1.00–3.60 μm of the optical spectrum) solar photocells with fundamentally new operating mechanisms, high stability and reproducibility of parameters and characteristics are shown.