Effect of Laser Radiation on InSe and GaSe Thin Films Grown via Laser Sublimation and Chemical Deposition

Salmanov, V.M.; Guseinov, A.G.; Məmmədov , Rövşən; Salmanova, A.A.; Gasanova, L.G.; Magomedov, A.Z.; Akhmedova, F.

doi:10.1134/s0036024418090236

Effect of Laser Radiation on InSe and GaSe Thin Films Grown via Laser Sublimation and Chemical Deposition

Salmanov V., Guseinov A., Məmmədov R., Salmanova A., Gasanova L., Magomedov A., ...daha çox

Russian Journal of Physical Chemistry A, vol.92, no.9, pp.1790-1793, 2018 (SCI-Expanded, Scopus)

Nəşrin Növü: Article / Article
Cild: 92 Say: 9
Nəşr tarixi: 2018
Doi nömrəsi: 10.1134/s0036024418090236
jurnalın adı: Russian Journal of Physical Chemistry A
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Səhifə sayı: pp.1790-1793
Açar sözlər: heterojunctions, laser ablation, thin films
Adres: Bəli

Qısa məlumat

Abstract: The formation of indium and gallium monoselenide thin films under the action of a powerful Nd : YAG laser is described. The use of laser radiation allows the production of substances of high purity and with accurately controlled composition. After GaSe nanoparticles are irradiated with high power laser, their structures change, clusters appear, and the size of nanoparticles falls from 93–75 to 10–15 nm. The rectification coefficient for an n-InSe/p-GaSe heterojunction subjected to laser excitation is 104 at an applied external voltage of ~1 V.