Half-Metallic Ferromagnetism in TM-Doped GaN Nanosheet - A Potential Candidate for Spintronics Device Application

Ismayilova N. A., Rai D. P.

NANO, vol.19, no.09, 2024 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 19 Issue: 09
  • Publication Date: 2024
  • Doi Number: 10.1142/s1793292024500450
  • Journal Name: NANO
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Biotechnology Research Abstracts, Communication Abstracts, Compendex, INSPEC, Metadex
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

Density functional theory (DFT) analyses were carried out to study electronic structures and magnetic properties of Mn- and Cu-doped GaNNS. To investigate the influence of transition metal atoms (TM) on magnetic properties, we substituted Ga atoms with Mn and Cu atoms in different concentrations. Investigation shows that TM leads to electronic structural reconstruction which changes their properties in this way, and plays a significant role in spin polarization. Although the pure nanosheet is a nonmagnetic semiconductor, the doped atoms induce magnetism in the structure. The band gap changes monotonically depending on the concentration of TM atoms. The observed good half-metal ferromagnetism GaNNS:Mn, allows them to be a potential candidate for use in spintronics. The local magnetic moment calculated from Mulliken analyses for the Mn atom is approximately 4.05 mu B.