Akademik Məlumat İdarəetmə Sistemi
Journal of Luminescence, vol.87, pp.664-666, 2000 (SCI-Expanded, Scopus)
A new band at around 495 nm was observed in the photoluminescence spectra of TlInS2 incommensurate ferroelectric at approx. 15 K after an above-band gap laser treatment of the samples. Steady-state and time-resolved characteristics of this band pointed to a formation of the localized state in the band gap of TlInS2. This light-induced state was stable with time and against elevating the temperature up to incommensurate-paraelectric phase transition point at approx. 215 K. Further elevating the temperature into paraelectric-phase erased the state and the newly observed emission was going away from the spectra at approx. 15 K. It was found that the light irradiation could form the new state in the weak ferroelectric phase of TlInS2 at temperatures below approx. 20 K, but it could not at approx. 50 K. All the data obtained were reproducible. The observed phenomenon is attributed to a kind of memory effect and is discussed in terms of defect ordering and successive phase transitions in this material.