Effect of Gamma Irradiation on the Electrical Properties of Extruded Bi<sub>85</sub>Sb<sub>15</sub>⟨Te⟩ Samples

Abdullaeva I. A., Abdinova G. D., Tagiyev M., Barkhalov B. S.

INORGANIC MATERIALS, vol.57, no.9, pp.887-892, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 57 Issue: 9
  • Publication Date: 2021
  • Doi Number: 10.1134/s0020168521090016
  • Journal Name: INORGANIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.887-892
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The electrical conductivity (sigma), thermoelectric power (alpha), and Hall coefficient (R-H) of Bi85Sb15 < Te > samples have been measured in the temperature range similar to 77-300 K before and after gamma irradiation to various doses. Gamma irradiation of Bi85Sb15 < Te > samples to low doses has been shown to produce structural defects that act as donor centers. As a result, the free electron concentration n and, accordingly, the electrical conductivity sigma of the material increase, whereas its alpha drops. Scattering current carriers, the defects reduce their mobility mu. With increasing irradiation dose, defect density rises, causing free carrier capture at the radiation-induced defect level. As a result, the n and sigma of the material drop, the Fermi level shifts deeper into the band gap, and alpha and mu increase. Temperature-dependent electrical parameters of the gamma-irradiated extruded Bi85Sb15 < Te > samples have been interpreted in terms of temperature dependences of carrier mobility and concentration.