Elements of optoelectronics based on p-gase<er> crystals


Abdinov A., Babayeva R.

International Journal on Technical and Physical Problems of Engineering, vol.13, no.2, pp.82-86, 2021 (Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 2
  • Publication Date: 2021
  • Journal Name: International Journal on Technical and Physical Problems of Engineering
  • Journal Indexes: Scopus
  • Page Numbers: pp.82-86
  • Keywords: Current Passing, Doping, Electroluminescence, Injection, Photoconductivity, Spectral Distribution, Switching Effect
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The features of the current passage phenomena under various modes, as well as photoconductivity and injection electroluminescence under various external and intracrystalline conditions in pure (in particular, undoped) and erbium (Er) doped (N≈10−5÷10−1 at.%) single crystals of layered p-GaSe semiconductor are experimentally investigated. On the basis of statistical and comparative analysis, a scientific explanation of the obtained experimental results is proposed and the possibility of creating a multifunctional optoelectronic element based on crystals of this semiconductor is shown, which combines the functions of a triac, light-controlled parameters, electroluminescent glow and current switches with an Sshaped current-voltage characteristic.