Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

Umirzakov B., İmanova G., Bekpulatov I., Turapov I. K.

Modern Physics Letters B, vol.37, no.24, 2023 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 37 Say: 24
  • Nəşr tarixi: 2023
  • Doi nömrəsi: 10.1142/s0217984923500781
  • jurnalın adı: Modern Physics Letters B
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC, zbMATH
  • Açar sözlər: auger spectrum, bandgap, distribution profile, Higher silicide, interdiffusion of atoms, light absorption spectrum, monolayer, nanoscale films
  • Adres: Bəli

Qısa məlumat

The regularities of the formation of thin Mn/Si (111) nanofilms during solid-phase deposition of Mn on Si under conditions of ultrahigh vacuum (P=10-7Pa) and thin Mn4Si7/Si (111) nanofilms during annealing of the Mn/Si system have been studied. It has been established that silicon atoms diffuse into the Mn film up to a thickness of Θ=10-12 monolayers, and Mn in Si up to Θ=8-10 monolayers, therefore, a transition layer of nonstoichiometric MnxSiy silicide is formed at the Mn-Si interface. After heating at T=1050K, the higher manganese silicide (HMS) Mn4Si7 is formed. In particular, it was found that the bandgap of Mn4Si7 is Eg≈0.72eV, and the electron affinity is χ≈3eV and in the work, the optimal thermal diffusion conditions for the formation of stoichiometric Mn4Si7 silicide are determined. It is shown that at T≤1000K, a partial formation of a chemical bond between manganese and silicon atoms occurs. At 1100K, a thin Mn4Si7 film with a good stoichiometric composition is formed.