Effect of Electric Field on Photoconductivity of <i>p</i>-GaSe Single Crystals


Abdinov A. S., Babaeva R.

RUSSIAN PHYSICS JOURNAL, vol.64, no.2, pp.276-281, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 64 Issue: 2
  • Publication Date: 2021
  • Doi Number: 10.1007/s11182-021-02326-1
  • Journal Name: RUSSIAN PHYSICS JOURNAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, INSPEC, zbMATH
  • Page Numbers: pp.276-281
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

Under various external and intracrystalline conditions (various temperatures, electric field strengths, initial values of the dark resistivity of the sample, the content and chemical nature of the introduced rare-earth impurity), the effect of a galvanically applied electric field on the intrinsic photoconductivity in single crystals of gallium selenide (p-GaSe) is studied. It is found that the photoconductivity in the samples of undoped p-GaSe single crystals with the initial dark resistivity rho(D0) <= 4 center dot 10(4) omega center dot cm at T = 77 K, as well as in the samples doped with rare earth elements (dysprosium and erbium) with a content of N-REE >= 10(-2) at.% does not depend on the electric field strength. In the samples of undoped single crystals with rho(D0)> 10(5) omega center dot cm and in the doped ones with N-REE< 10(-2) at.%, the photoconductivity depends on the electric field strength at T <= 250 K and low illumination. The observed effect of the electric field on the photoconductivity in the studied samples of p-GaSe single crystals is explained by the electric rectification of electron potential fluctuation of empty energy bands caused by the presence of random macroscopic defects in the crystals.