Effect of Dy Doping on the Photoelectric Properties of GaSe Single Crystals

Abdinov A., Babaeva R., Dzhafarov M., Nurullaev Y., Rzaev R.

INORGANIC MATERIALS, vol.34, no.3, pp.205-206, 1998 (SCI-Expanded)

  • Nəşrin Növü: Article / Article
  • Cild: 34 Say: 3
  • Nəşr tarixi: 1998
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.205-206
  • Adres: Yox

Qısa məlumat

Residual conductivity, impurity photoconductivity, and IR quenching of intrinsic photocurrent were studied in GaSe layered crystals doped with Dy to 10-5-10-1 at. %. Doping with Dy was found to cause drastic changes in the photoelectric behavior of GaSe. Based on the results obtained for GaSe, a generalized multicenter model is proposed for III-VI layered crystals.