In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Guseynov R., Tanriverdiyev V., Kipshidze G., Aliyeva Y. N., Aliguliyeva K. V., Abdullayev N., ...daha çox

Semiconductors, vol.51, no.4, pp.524-530, 2017 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 51 Say: 4
  • Nəşr tarixi: 2017
  • Doi nömrəsi: 10.1134/s1063782617040066
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.524-530
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs1–xSbx alloys is established.