Transition metal-doped GaSb nanosheets: High curie temperature and spintronic applications

Ismayilova N., Abiyev A.

Computational Condensed Matter, vol.45, 2025 (ESCI, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 45
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1016/j.cocom.2025.e01119
  • jurnalın adı: Computational Condensed Matter
  • Jurnalın baxıldığı indekslər: Emerging Sources Citation Index (ESCI), Scopus
  • Açar sözlər: Density of state, DFT, Half-metallic band, Magnetic moment TM doped GaSbNSs, Nanosheet
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

Using density functional theory, the magnetic and electrical characteristics of two-dimensional GaSb nanosheets doped with transition metals (Cr, Mn, Fe, Co, V, and Cu) were methodically investigated. The most stable magnetic states were found by optimizing a variety of ferromagnetic and antiferromagnetic designs. Although the pristine GaSb nanosheet has a wide bandgap of 1.78 eV and is not magnetic, transition metal doping causes structural distortions and localized magnetic moments. Interestingly, Cr-, Fe-, and Mn-doped GaSb nanosheets show half-metallic ferromagnetism and full spin polarization, which makes them interesting for spintronic applications. For Fe-, Cr- and Mn doped systems, the Curie temperature (TC), which is calculated using the mean-field approximation from the energy difference between ferromagnetic and disordered local moment configurations, is much higher than room temperature (RT). The potential of TM-doped GaSb nanosheets in upcoming low-dimensional spintronic and nanoelectronic devices is highlighted by these results.