Semiconductors, vol.53, no.3, pp.291-295, 2019 (SCI-Expanded, Scopus)
Abstract: The temperature dependences of the Raman-active frequencies E g 2 A1g in layered Bi 2 Se 3 single crystals are studied. The contribution of the thermal expansion to a temperature variation in the frequencies is determined. The decay of the anisotropy of the elastic properties in layered Bi 2 Se 3 single crystals due to strong spin–orbit coupling is shown. The Gruneisen-mode parameters for phonons E g 2 are calculated. Systematic features in the dependences of vibrational frequencies on the atomic masses in layered Bi 2 Te 3 , Bi 2 Se 3 , and Sb 2 Te 3 single crystals are determined.