Topologically Nontrivial Phase-Change Compound GeSb2Te4

Nurmamat M., Okamoto K., Zhu S., Menshchikova T. V., Rusinov I. P., Korostelev V. O., ...daha çox

ACS Nano, vol.14, no.7, pp.9059-9065, 2020 (SCI-Expanded, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 14 Say: 7
  • Nəşr tarixi: 2020
  • Doi nömrəsi: 10.1021/acsnano.0c04145
  • jurnalın adı: ACS Nano
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Biotechnology Research Abstracts, Chemical Abstracts Core, Chimica, Compendex, EMBASE, INSPEC, MEDLINE
  • Səhifə sayı: pp.9059-9065
  • Açar sözlər: Inertia-free Dirac currents, Linearly dispersive bulk band, Phase-change materials, Pump-probe method, Topologically nontrivial phase
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.