Crystal structure and electronic spectrum of InGaSe2

Gojaev E., Cahangirli Z., Ragimov R., Alieva P.

Inorganic Materials, vol.53, no.7, pp.670-674, 2017 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 53 Say: 7
  • Nəşr tarixi: 2017
  • Doi nömrəsi: 10.1134/s0020168517070068
  • jurnalın adı: Inorganic Materials
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.670-674
  • Açar sözlər: band structure, DFT, InGaSe2, X-ray diffraction
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

We report the synthesis and crystal growth of InGaSe2. The crystals have been characterized by X-ray diffraction and InGaSe2 has been shown to crystallize in tetragonal symmetry. Using first-principles density functional theory (DFT) calculations, we have found optimized lattice parameters and equilibrium atomic position coordinates of the compound semiconductor InGaSe2. Based on the optimization results, we have calculated the band structure and the total and projected densities of states in InGaSe2, found out the origin of its conduction and valence bands, and determined its band gap. Using the partial densities of states of its constituent atoms, we have evaluated the nature of the chemical bonding in InGaSe2.