Peculiarities of Kinetic Coefficients of Single Crystals of a Layered <i>?</i>-GaSe Semiconductor


Abdinov A. S., Babaeva R.

RUSSIAN PHYSICS JOURNAL, vol.61, no.9, pp.1667-1673, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 61 Issue: 9
  • Publication Date: 2019
  • Doi Number: 10.1007/s11182-018-1585-1
  • Journal Name: RUSSIAN PHYSICS JOURNAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1667-1673
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The dependences of the kinetic coefficients, namely, the Hall coefficient, electrical conductivity, and charge carrier mobility on the temperature, electric field strength, and doping with rare-earth elements are investigated in single crystals of p-type gallium selenide. It has been established that in the low-temperature region, these dependences have a peculiarity caused by the presence of random macroscopic defects in the samples under study. At a small level of doping of p-GaSe single crystals with Gd and Er, a non-monotonic dependence of the mobility and electrical conductivity on the content of the introduced impurity is observed.