Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

Igamov B. D., Imanova G., Kamardin A. I., Bekpulatov I. R.

INTEGRATED FERROELECTRICS, vol.240, no.1, pp.53-63, 2024 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 240 Issue: 1
  • Publication Date: 2024
  • Doi Number: 10.1080/10584587.2023.2296317
  • Journal Name: INTEGRATED FERROELECTRICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.53-63
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The results of complex experimental studies of the parameters of thin coatings of SiO2 oxides on Si, formed by thermal oxidation at temperatures of 1200 degrees C, including studies using electron and X-ray spectroscopy, IR-Fourier spectrometer IRTracer-100 - developed by Shimadzu, Raman scattering, and test electrophysical structures, are presented. Data have been obtained that for a silicon dioxide thickness of about 400 nm, the porosity of the coating does not exceed 2/cm2, and the electric field strength for the breakdown of the dioxide reaches 5 center dot 106 V/cm. The crystal structure of SiO2 is triclinic, lattice period a = 4.9160 angstrom, b = 4.9170 angstrom, c = 5.4070 angstrom, a = 90.000, b = 90.000, gamma = 120.000, density 2.64 g/cm(3).