Akademik Məlumat İdarəetmə Sistemi
International Conference PhysicA.SPb 2020, Saint Petersburg, Russia, 19 - 23 October 2020, vol.1697
Thermo-e.m.f. of hot current carriers is experimentally investigated in non-doped n-InSe crystals with a dark specific resistance of 2•103≤ρD0 ≤9•106Ω•cm at 77 K and doped with erbium with 10-5≤NEr ≤10-1at.%. It was found that its absolute value (|UT |), in addition to Ê and T0, also depends on ρD0 and N. In the non-doped samples with ρD0 ≤1•104Ω•cm and doped with NEr >10-2 at.%, the dependence |UT|(Ê) consists of successive sections: |UTT|∼ Ê2 |UT|∼ Ê and |UT|∼ Ê0.5. In non-doped with ρD0 ≥ 5•104 Ω•cm and alloyed with 10-5≤NEr ≤ 10-2 at.% samples at T0 < 250 K and low-heating Ê dependence |UT|(Ê) obeys the law |UT| ∼ Ê κ with 2<κ≤5. The value of k monotonously depends on NEr and reaches its maximum value at NEr =5•10-4 at.%. At T0 >250 K, in all the samples studied, as well as in non-doped low-resistance and doped with NEr >10-2 at.% samples for all T0, the dependence |UT|(Ê) follows the theory of thermo-e.m.f. of hot current carriers in spatially homogeneous crystalline semiconductors. To explain the results in non-doped high-resistance and doped with 10-5≤NEt ≤10-2 at.% samples at T0 <250 K, the influence of random macroscopic defects must also be taken into account. A qualitative explanation of the results is proposed.