Dependence of the Bi0.5Sb1.5Te3/Bi-Sn and Bi2Te2.7Se0.3/Bi-Sn Junction Resistances on the Resistivity of the Semiconductor Crystal in the Interfacial Region

Alieva T., Axundova N., Abdinov D.

Inorganic Materials, vol.32, no.6, pp.604-605, 1996 (Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 32 Say: 6
  • Nəşr tarixi: 1996
  • jurnalın adı: Inorganic Materials
  • Jurnalın baxıldığı indekslər: Scopus
  • Səhifə sayı: pp.604-605
  • Adres: Bəli

Qısa məlumat

The junction resistance of Bi0.5Sb1.5Te3/Bi-Sn and Bi2Te2.7Se0.3/Bi-Sn contacts was studied as a function of the resisitivity of the semiconductor crystal in the interfacial region. For the 57 wt % Bi + 43 wt % Sn contact material, the junction resistance decreases with decreasing resistivity of the semiconductor crystal. This finding is attributed to the increase in majority carrier concentration accompanied by a shift of the Fermi level and a change in work function. The junction resistance can be controlled by varying the composition of the Bi-Sn contact material to produce a heavily doped semiconductor layer next to the junction.