Dependence of the Bi0.5Sb1.5Te3/Bi-Sn and Bi2Te2.7Se0.3/Bi-Sn Junction Resistances on the Resistivity of the Semiconductor Crystal in the Interfacial Region

Alieva T., Axundova N., Abdinov D.

Inorganic Materials, vol.32, no.6, pp.604-605, 1996 (Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 32 Issue: 6
  • Publication Date: 1996
  • Journal Name: Inorganic Materials
  • Journal Indexes: Scopus
  • Page Numbers: pp.604-605
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The junction resistance of Bi0.5Sb1.5Te3/Bi-Sn and Bi2Te2.7Se0.3/Bi-Sn contacts was studied as a function of the resisitivity of the semiconductor crystal in the interfacial region. For the 57 wt % Bi + 43 wt % Sn contact material, the junction resistance decreases with decreasing resistivity of the semiconductor crystal. This finding is attributed to the increase in majority carrier concentration accompanied by a shift of the Fermi level and a change in work function. The junction resistance can be controlled by varying the composition of the Bi-Sn contact material to produce a heavily doped semiconductor layer next to the junction.