Features of the edge photoconductivity of gamma-irradiated layered crystals GaS and GaS:Yb under the strong electric field

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Madatov R., Alekperov A., Gadzhieva N., Asadov F., Allahverdiev S., Asadov E., ...More

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol.33, no.09, pp.1-8, 2019 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 33 Issue: 09
• Publication Date: 2019
• Doi Number: 10.1142/s0217979219500668
• Journal Name: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.1-8
• Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The influence of the surface electric field on the edge photoconductivity (PC) in undoped and ytterbium-doped (NYb" role="presentation" >Yb${}_{\text{Yb}}$∼" role="presentation" >∼$\sim$ 1018" role="presentation" >18${}^{18}$ cm−3" role="presentation" >−3${}^{-3}$) layered GaS crystals at T = 77 K irradiated with gamma quanta was investigated. It was found that the PC of layered crystals in the absorption edge region due to charge exchange of surface levels is formed as a result of electric smoothing of fluctuations in the potential of surface energy bands. The degree of smoothing of the surface bending of the zones depends on the dose of γ" role="presentation" >γ$\gamma$-irradiation, the concentration of impurity atoms and also on the magnitude and direction of the transverse electric field.