Vibrational modes in (TlGaS<sub>2</sub>)<sub><i>x</i></sub>-(TlGaSe<sub>2</sub>)<sub>1-<i>x</i></sub>mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line-shapes

Isik M., TERLEMEZOĞLU BİLMİŞ M., HASANLI N., Babayeva R.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.17, pp.14330-14335, 2020 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 31 Say: 17
  • Nəşr tarixi: 2020
  • Doi nömrəsi: 10.1007/s10854-020-03990-8
  • jurnalın adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Səhifə sayı: pp.14330-14335
  • Adres: Bəli

Qısa məlumat

TlGaS(2)and TlGaSe(2)ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)(x)-(TlGaSe2)(1-x)layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80-400 cm(-1)for compositions ofx = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition.