Effect of rare-earth doping on the electrical properties of InSe single crystals

Rzayev R., Abdinov A., Babaeva R., Bagirova A.

INORGANIC MATERIALS, vol.42, pp.937-941, 2006 (SCI-Expanded, Scopus)

  • Nəşrin Növü: Article / Article
  • Cild: 42
  • Nəşr tarixi: 2006
  • jurnalın adı: INORGANIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.937-941
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The effect of rare-earth doping (R = Gd, Dy, Ho) to different levels (0, 10−5, 10−4, 10−3, 10−2, and 10−1 at %) on threshold switching and low-frequency current oscillations in single crystals of indium selenide, a layered III–VI semiconductor, has been studied in broad ranges of temperatures (77–400 K), wavelengths (0.30–3.50 μm), and illuminances (up to ∼102 lx). The results are interpreted in terms of the anisotropic chemical bonding in n-InSe and its response to rare-earth doping.