Electrical Properties of Sn-Excess SnTe Single Crystal and Metal-Semiconductor Contacts

Akhundova N., Aliyeva T. D.

RUSSIAN PHYSICS JOURNAL, vol.62, no.1, pp.114-118, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 62 Issue: 1
  • Publication Date: 2019
  • Doi Number: 10.1007/s11182-019-01690-3
  • Journal Name: RUSSIAN PHYSICS JOURNAL
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.114-118
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The paper deals with the grown tin telluride (SnTe) single crystals ?ontaining extrinsic stacking faults (SFs) and their alloyed ohmic contacts of the 57Bi-43Sn eutectic alloy in the temperature range of 77-300 K. It is found that at a low concentration, SFs decrease the hole concentration and increase the electrical resistivity of specimens when they occupy vacancies in the Sn sublattice. At a high concentration, SFs create new current carriers, thereby decreasing the specific resistance of specimens. The ohmic contact resistance is rather low, and the current flows mainly through metallic shunts.