Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics
Semiconductors, vol.54, no.11, pp.1406-1409, 2020 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 54 Issue: 11
- Publication Date: 2020
- Doi Number: 10.1134/s1063782620110044
- Journal Name: Semiconductors
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
- Page Numbers: pp.1406-1409
- Keywords: heterojunction, layered single crystal, photosensitivity, quantum efficiency, spectral characteristic, γ radiation
- Open Archive Collection: Article
- Azerbaijan State University of Economics (UNEC) Affiliated: No
Abstract
Abstract: The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different γ-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 μm. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.