Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics

Alekperov A., Dashdemirov A., Ismayilova N., Jabarov S.

Semiconductors, vol.54, no.11, pp.1406-1409, 2020 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 54 Say: 11
  • Nəşr tarixi: 2020
  • Doi nömrəsi: 10.1134/s1063782620110044
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Səhifə sayı: pp.1406-1409
  • Açar sözlər: heterojunction, layered single crystal, photosensitivity, quantum efficiency, spectral characteristic, γ radiation
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

Abstract: The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different γ-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 μm. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.