Effect of light on the mobility of free carriers in indium-monoselenide crystals

Abdinov A. S., Babayeva R., Amirova S. I., Ragimova N. A., Rzayev R.

SEMICONDUCTORS, vol.48, no.8, pp.981-985, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 48 Issue: 8
  • Publication Date: 2014
  • Doi Number: 10.1134/s1063782614080028
  • Journal Name: SEMICONDUCTORS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.981-985
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The effect of light from intrinsic and impurity optical absorption regions on free-carrier mobility in nominally undoped indium monoselenide n-InSe crystals with the initial dark conductivity sigma (T0) = 10(-3)-10(-8) Omega(-1) cm(-1) at 77 K is investigated under different external conditions. The dependences of free-carrier mobility, positive and negative mobility memories, and quenching of the mobility memory on ilumination are established. A model based on partial disorder of the investigated crystals is proposed: this model satisfactorily interprets the experimental data obtained.