Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

Kyazym-zade, A.G.; Salmanov, V.M.; Guseinov, A.G.; Məmmədov , Rövşən; Agamaliev, Z.A.; Salmanova, A.A.; Akhmedova, F.M.

doi:10.1134/s1063784219040145

Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

Kyazym-zade A., Salmanov V., Guseinov A., Məmmədov R., Agamaliev Z., Salmanova A., ...More

Technical Physics, vol.64, no.4, pp.555-558, 2019 (SCI-Expanded, Scopus)

Publication Type: Article / Article
Volume: 64 Issue: 4
Publication Date: 2019
Doi Number: 10.1134/s1063784219040145
Journal Name: Technical Physics
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Page Numbers: pp.555-558
Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

Abstract: Conductivity inversion in thin n-InSe films under intense pulsed laser irradiation was obser. A p–n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.