Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

Kyazym-zade, A.G.; Salmanov, V.M.; Guseinov, A.G.; Məmmədov , Rövşən; Agamaliev, Z.A.; Salmanova, A.A.; Akhmedova, F.M.

doi:10.1134/s1063784219040145

Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

Kyazym-zade A., Salmanov V., Guseinov A., Məmmədov R., Agamaliev Z., Salmanova A., ...daha çox

Technical Physics, vol.64, no.4, pp.555-558, 2019 (SCI-Expanded, Scopus)

Nəşrin Növü: Article / Article
Cild: 64 Say: 4
Nəşr tarixi: 2019
Doi nömrəsi: 10.1134/s1063784219040145
jurnalın adı: Technical Physics
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Səhifə sayı: pp.555-558
Adres: Bəli

Qısa məlumat

Abstract: Conductivity inversion in thin n-InSe films under intense pulsed laser irradiation was obser. A p–n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.