Structural and Optical Properties of Ga<sub>2</sub>Se<sub>3</sub> Crystals by Spectroscopic Ellipsometry

Guler I., Isik M., HASANLI N., Gasanova L. G., Babayeva R.

JOURNAL OF ELECTRONIC MATERIALS, vol.48, no.4, pp.2418-2422, 2019 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 48 Say: 4
  • Nəşr tarixi: 2019
  • Doi nömrəsi: 10.1007/s11664-019-07000-4
  • jurnalın adı: JOURNAL OF ELECTRONIC MATERIALS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.2418-2422
  • Adres: Yox

Qısa məlumat

Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.