Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

Shvets I., Klimovskikh I., Aliev Z., Babanlı M., Zúñiga F., Sánchez-Barriga J., ...More

Physical Review B, vol.100, no.19, 2019 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 100 Issue: 19
  • Publication Date: 2019
  • Doi Number: 10.1103/physrevb.100.195127
  • Journal Name: Physical Review B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV.