CHARACTERISTICS OF NEGATIVE PHOTOELECTRIC EFFECTS IN TlGaSe2 CRYSTALS.
Soviet physics. Semiconductors, vol.17, no.10, pp.1141-1143, 1983 (Scopus)
- Publication Type: Article / Article
- Volume: 17 Issue: 10
- Publication Date: 1983
- Journal Name: Soviet physics. Semiconductors
- Journal Indexes: Scopus
- Page Numbers: pp.1141-1143
- Open Archive Collection: Article
- Azerbaijan State University of Economics (UNEC) Affiliated: Yes
Abstract
Both a negative photoconductivity and a negative residual photoconductivity were observed for the first time in TlGaSe//2 crystals. The latter effect appeared in the absence of a residual photoconductivity. A scheme of recombination transitions accounting for both effects in TlGaSe//2 crystals was proposed.