Electrophysical properties of CdxHg1-xTe C 0.30≤x≤0.80 crystals at weak electric fields
UNEC Journal of Engineering and Applied Sciences, vol.6, no.1, pp.115-122, 2026 (Scopus)
- Publication Type: Article / Article
- Volume: 6 Issue: 1
- Publication Date: 2026
- Doi Number: 10.61640/ujeas.2026.0511
- Journal Name: UNEC Journal of Engineering and Applied Sciences
- Journal Indexes: Scopus
- Page Numbers: pp.115-122
- Keywords: carrier scattering, defects, electrical conductivity, Hall coefficient, Hall mobility, solid solution
- Open Archive Collection: Digital Heritage Collection
- Azerbaijan State University of Economics (UNEC) Affiliated: Yes
Abstract
To identify the specific features and clarify the mechanism of interaction between free charge carriers and various defects in CdxHg1-xTe crystals, the temperature dependence of electrophysical parameters (specific dark conductivity, Hall constant, and Hall mobility) was experimentally studied in n-and p-type CdxHg1-xTe crystal samples with different Cd contents (with a value of 0.30≤x≤0.80) at weak electric fields. It is shown that in these crystals at T≤120 K, in addition to the scattering of free charge carriers on impurity ions, a significant influence of drift barriers on the process of charge carrier transfer is manifested, and at higher temperatures the influence of scattering on lattice vibrations begins to dominate.