Photoluminescence of rare-earth-doped InSe and GaSe single crystals

Abdinov A. S., Babaeva R., Rzaev R., Gasanov G. A.

Inorganic Materials, vol.40, no.6, pp.567-569, 2004 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 40 Issue: 6
  • Publication Date: 2004
  • Doi Number: 10.1023/b:inma.0000031987.03089.a8
  • Journal Name: Inorganic Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.567-569
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The effect of doping with Gd, Ho, and Dy (10 -5 to 10 -1 at %) on the photoluminescence behavior (intensity and shape of the spectrum) of single crystals of the layered compounds InSe and GaSe is studied in the range 77-300 K. It is shown that, in both selenides, photoluminescence is of excitonic nature.