Modulation of Conductivity in Neutron-Irradiated Nanocrystalline β-SiC Through Trace and Dopant Elements
JOURNAL OF ELECTRONIC MATERIALS, vol.54, no.10, pp.8920-8934, 2025 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 54 Issue: 10
- Publication Date: 2025
- Doi Number: 10.1007/s11664-025-12198-7
- Journal Name: JOURNAL OF ELECTRONIC MATERIALS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC
- Page Numbers: pp.8920-8934
- Azerbaijan State University of Economics (UNEC) Affiliated: No
Abstract
The analysis of radioisotopes of trace elements in silicon carbide (beta-SiC) nanoparticles was conducted as a function of time following neutron irradiation. The concentration of trace elements and sample purity were determined using the k0-INAA technique. A comparative analysis was performed to examine the effects of trace and dopant elements on the electrical conductivity of beta-SiC nanoparticles before and after neutron irradiation. Electrical conductivity was examined across frequency and temperature ranges pre- and post-irradiation. Following neutron irradiation, radiation-induced conductivity (RIC) was recorded in silicon carbide nanoparticles and explored as a function of frequency. The interdependence between the real and imaginary components of electrical conductivity was analyzed to determine the type of conductivity.