Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

Rzayev R., Mamedov H., Kukevecz A., Konya Z.

vol.61, pp.1660-1666, 2019 (Peer-Reviewed Journal)

  • Nəşrin Növü: Article / Article
  • Cild: 61
  • Nəşr tarixi: 2019
  • Səhifə sayı: pp.1660-1666
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.