Research Information System
Inorganic Materials, vol.33, no.12, pp.1238-1240, 1997 (SCI-Expanded)
The electrical properties of extruded Bi0.85Sb0.15 were studied in the temperature range 77-300 K in magnetic fields up to ∼ 72 × 104 A/m before and after annealing at ∼ 500 K for 5 h. At 77 K, the current carriers in the unannealed material are scattered mainly from deformation-induced structural defects. Postextrusion heat treatment leads to defect annealing, thereby notably increasing carrier mobility and electrical conductivity; as a result of annealing, the scattering of current carriers from acoustic phonons prevails. This mechanism is consistent with the field dependences of the thermoelectric power, conductivity, and Hall coefficient at different temperatures.