EXCITON STATES IN LAYER TlGaS2xSe2(1 - x) SEMICONDUCTORS.


Abdullaeva S., Belen'kii G., MƏMMƏDOV N.

Soviet physics. Semiconductors, vol.15, no.5, pp.540-542, 1981 (Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 15 Issue: 5
  • Publication Date: 1981
  • Journal Name: Soviet physics. Semiconductors
  • Journal Indexes: Scopus
  • Page Numbers: pp.540-542
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

A study of the ordinary and differential absorption spectra of TlGaS//2//xSe//2//(//1// minus //x//) (0 less than equivalent to x less than equivalent to 1) crystals, recorded at 6 degree K, revealed absorption lines corresponding to direct optical transitions to two exciton energy bands of different symmetry in TlGaSe//2 crystals. The energy was determined of that exciton band to which optical transitions in TlGaSe//2 crystals were assisted by phonons. The shift of the exciton bands of TlGaS//2//xSe//2//(//1// minus //x//) crystals was plotted as a function of the composition. The results indicate that in the range of compositions with x equals 0. 1 there was a change in the nature of the optical transitions when the composition x was altered.