SOLID SOLUTIONS IN Cu2Se – Ga2Se – In2Se3 NANOTHICK FILMS

Creative Commons License

Mamedova A., Mekhtiyeva S., Huseynov H., Alıyev Y., Bagirova H.

Advanced Physical Research, vol.7, no.2, pp.196-203, 2025 (Scopus)

  • Publication Type: Article / Article
  • Volume: 7 Issue: 2
  • Publication Date: 2025
  • Doi Number: 10.62476/apr.72196
  • Journal Name: Advanced Physical Research
  • Journal Indexes: Scopus
  • Page Numbers: pp.196-203
  • Keywords: amorphous film, electron diffraction, phase formation, solid solutions
  • Open Archive Collection: Digital Heritage Collection
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

By electron difraction method the processes of phase formation and phase transitions in Cu2Se – Ga2Se – In2Se3 system thin films have been investigated. By kinematic electron diffraction method it is established that as a result of polycrystalline α – β transformation of CuIn5Se8 composition ternary compound has been taken place. There have been revealed the formation conditions and phase equilibrium distributed on condensation plane of phases in the form of CuGa5(In5)Se8 ternary compounds and CuGa5(In1−xGax)Se8 composition solid solutions with different ratio of components.