Akademik Məlumat İdarəetmə Sistemi
Materials Research Innovations, 2024 (Scopus)
The processes of formation of a thin film of cobalt disilicide on the silicon surface due to the formation of several nuclei of atomic thickness on the surface of the silicon substrate are presented. To create these structures, the ion implantation method was used. The dependence of the depth of penetration of ions into the substrate during ion implantation on temperature and ion dose was determined. In the case of implantation of Co+ ions into Si at room temperature silicon uniformly combines with Co atoms at a depth of 3.5–4 nm, the Co concentration in these layers is 45–50 at. %. Co has been shown to form chemical bonds with Si atoms in the sample containing 40–45 atomic % of Co. When implanting Co+ into Si at 600 K, it was found that the depth of the same added layer is 2.5–3 nm, and CCo forming bonds with Si atoms increases to 85–90%.