DEPENDENCE OF PHOTOCONDUCTIVITY ON THE ELECTRICAL FIELD IN n-InSe

Babayeva R. F.

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 1 - 03 May 2019, pp.20-23 identifier

  • Nəşrin Növü: Conference Paper / Full Text
  • Çap olunduğu şəhər: Baku
  • Ölkə: Azerbaijan
  • Səhifə sayı: pp.20-23
  • Adres: Bəli

Qısa məlumat

The main characteristics of photoconductivity in indium monoselenide crystals with different initial dark resistivity were experimentally investigated at temperatures of 77 divided by 300 K and electric field strengths of E <= 2.5.10(3) V/cm. In high-resistance crystals at temperatures below 200 divided by 250 K, under the action of an electric voltage corresponding to a non-linear region of a static I-V characteristic, the effect of an electric field on the photoconductivity was detected. A model is proposed that qualitatively satisfactorily explains the experimental results obtained.