Prof. RƏNA BABAYEVA

Born on December 30, 1969 in Baku, she studied at secondary school No. 42 in Nasimi district of Baku city from 1976 to 1986. In 1986, she graduated from secondary school with excellent grades and in the same year was admitted to the full-time department of the Physics Faculty of Azerbaijan State University (now Baku State University). In 1991, having successfully graduated from this faculty with a degree in “Physics, Physics Teacher”, she began her work activity at the Institute of Inorganic and Physical Chemistry of the Azerbaijan National Academy of Sciences on a state assignment, where she worked as a senior laboratory assistant until December 1991.

At the end of 1991, with the guarantee of the Scientific Council of the Faculty of Physics of Baku State University, she entered the full-time postgraduate course in the specialty "Physical Electronics" at the "Solid State Electronics" Scientific Research Laboratory operating under the same faculty, and in 1994, before the end of the postgraduate course, she completed her dissertation work.

After completing her postgraduate studies, in 1994, by the order of the Ministry of Education of the Republic of Azerbaijan, she was appointed as a senior lecturer in the "Physics" department of the Baku State Institute of Commodity Studies and Commerce, and since 1997 she has been an associate professor of this department, and since 2000, she has been a professor of the "Physics and Chemistry" department of the Azerbaijan State University of Economics, and since 2013, she has been a professor of the same department, and since 2020, she has been a professor of the "Engineering and Applied Sciences" department.

In 1995, she defended his PhD dissertation on the topic “Effect of doping on electronic processes in partially disordered semiconductors of the indium selenium monocrystal type” at the Dissertation Council of the Institute of Photoelectronics of the Azerbaijan National Academy of Sciences, majoring in “01.04.04 - physical electronics”, and received the degree of Candidate of Physical and Mathematical Sciences (May 3, 1995, protocol No. 25). In 2009, she defended his PhD dissertation on the topic “Characteristics of electronic phenomena in partially disordered semiconductors of the AIIIBVI type with layered structure doped with rare earth elements and heterojunctions prepared on their basis”, majoring in “01.04.07 - solid state physics”, and received the degree of “Doctor of Sciences in Physics” (June 24, 2011, protocol No. 11-R).

In 1998, she was awarded the scientific titles of Associate Professor in the Department of Physics (December 14, 1998, Protocol No. 47) by the Higher Attestation Commission under the President of the Republic of Azerbaijan, and in 2017, Professor in the Department of Physics and Chemistry (February 10, 2017, Protocol No. 01-R).

She has published more than 310 scientific works, more than 50 of which are in 7 high-index international scientific journals, more than 55 in the materials of prestigious international scientific symposia and conferences held in 10 different countries, and the rest in highly prestigious scientific journals of the Republic of Azerbaijan and foreign countries - a total of 14 different scientific journals, including 12 subject programs written for higher education institutions, 5 textbooks and teaching aids, and was the first (1995) Laureate of the "Republican Competition of Young Scientists" held in the Republic of Azerbaijan. In 2016, 1 monograph was published in Russian by the German publishing house “LAP LAMBERT Academic Publishing”. Up to 348 references have been made to my scientific articles posted on the “Google Scholar” platform by various scientists. For the first time, the physical mechanism of the causes of the statistical instability of the parameters and characteristics of photoelectric, electrophysical, and contact phenomena in the crystals of semiconductors belonging to the class of layered crystal structures AIIIBVI compounds was clarified in the experimental studies conducted, and the possibility of purposefully regulating this instability by doping these semiconductor crystals with rare earth elements in appropriate amounts was shown. The phenomenon of additive accumulation of the effect of weak-intensity sequential light signals creating a photoelectric memory in the aforementioned semiconductor materials was observed, and a special model was proposed for the scientific explanation of this phenomenon.

She is a member of the Expertise Commission, the Scientific Council of the Faculty of Engineering and the Scientific-Methodological Council of the University, established to examine the documents submitted by employees applying for Scientific Titles and Scientific Degrees at the University. Since 01.10.2022, she has been appointed as the head of the specialty "Electrical and Electronics Engineering" of the Department of "Engineering and Applied Sciences".

In 1997 and 2017, she was awarded the "Honorary Decree" of the Ministry of Education of the Republic of Azerbaijan, and in 2020, she was awarded the "Progress" medal.