Prof. RƏNA BABAYEVA

I was born on December 30, 1969 in Baku, and from 1976 to 1986 I studied at secondary school No. 42 in Nasimi district of Baku. In 1986 I graduated from secondary school with excellent grades and in the same year I was admitted to the full-time department of the Physics Faculty of Azerbaijan State University (now Baku State University). In 1991, having successfully graduated from this faculty with a degree in “Physics, Physics Teacher”, I began my work at the Institute of Inorganic and Physical Chemistry of the Azerbaijan National Academy of Sciences on a state assignment, where I worked as a senior laboratory assistant until December 1991.

At the end of 1991, with the guarantee of the Scientific Council of the Faculty of Physics of Baku State University, I entered the full-time postgraduate course in the specialty "Physical Electronics" at the "Solid State Electronics" Scientific Research Laboratory operating under the same faculty, and in 1994, before the end of the postgraduate course, I completed my dissertation work.

After completing my postgraduate studies, in 1994, by the order of the Ministry of Education of the Republic of Azerbaijan, I was appointed as a senior lecturer at the "Physics" department of the Baku State Institute of Commodity Studies and Commerce. Since 1997, I have been an associate professor of this department, and since 2000, I have been working as a professor of the same department since 2013, and since 2020, I have been working as a professor of the "Engineering and Applied Sciences" department.

In 1995, I defended my PhD dissertation on the topic “Effect of doping on electronic processes in partially disordered semiconductors of the indium selenium single crystal type” at the Dissertation Council of the Institute of Photoelectronics of the Azerbaijan National Academy of Sciences, majoring in “01.04.04 - physical electronics”, and received the degree of Candidate of Physical and Mathematical Sciences (May 3, 1995, protocol No. 25). In 2009, I defended my PhD dissertation on the topic “Characteristics of electronic phenomena in partially disordered semiconductors of the AIIIBVI crystal type with a layered structure doped with rare earth elements and heterojunctions prepared on their basis”, majoring in “01.04.07 - solid state physics”, and received the degree of “Doctor of Sciences in Physics” (June 24, 2011, protocol No. 11-R).

In 1998, the Higher Attestation Commission under the President of the Republic of Azerbaijan awarded me the scientific titles of Associate Professor in the Department of Physics (December 14, 1998, Protocol No. 47), and in 2017, Professor in the Department of Physics and Chemistry (February 10, 2017, Protocol No. 01-R).

I am the author of more than 285 scientific works, more than 50 of which are published in 7 high-index international scientific journals, more than 55 in the materials of prestigious international scientific symposia and conferences held in 10 different countries, and the rest in highly prestigious scientific journals of the Republic of Azerbaijan and foreign countries - a total of 14 different scientific journals, including 4 subject programs written for higher education institutions, 5 textbooks and teaching aids, and the first (1995) Laureate of the "Republican Competition of Young Scientists" held in the Republic of Azerbaijan. In 2016, my 1st monograph in Russian was published by the German publishing house “LAP LAMBERT Academic Publishing”. Up to 279 references have been made to my scientific articles published on the “Google Scholar” platform by various scientists. In my experimental studies, for the first time, the physical mechanism of the causes of the statistical instability of the parameters and characteristics of photoelectric, electrophysical, and contact phenomena in the crystals of semiconductors belonging to the class of layered crystal structures AIIIBVI compounds was clarified, and the possibility of purposefully regulating this instability by doping these semiconductor crystals with rare earth elements in appropriate amounts was shown. The phenomenon of additive accumulation of the effect of weak-intensity sequential light signals creating a photoelectric memory in the aforementioned semiconductor materials was observed, and a special model was proposed for the scientific explanation of this phenomenon.

I am a member of the Expertise Commission, established to examine the documents submitted by employees applying for academic titles and degrees at the university, and the Scientific Council of the Faculty of Engineering. Since 01.10.2022, I have been appointed as the head of the specialty "Electrical and Electronics Engineering" of the "Engineering and Applied Sciences" department.

In 1997 and 2017, I was awarded the "Honorary Decree" of the Ministry of Education of the Republic of Azerbaijan, and in 2020, I was awarded the "Tereqqi" medal.