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Peculiarities of TP-e.m.f. caused by the heating of charge carriers by an electric field in a layered semiconductor n-InSe

Naghiyev T., Babayeva R., Abiyev A. S.
EUROPEAN PHYSICAL JOURNAL B , vol.97, no.9, 2024 (SCI-Expanded) identifier identifier

Characterization of rare-earth-doped photocells based on p-GaSe/n-InSe heterojunctions

Abdinov A. S., Babayeva R., Aliyev Y. I.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2024 (SCI-Expanded) identifier identifier

Temperature dependence of photoconductivity in layered semiconductor p-GaSe

Naghiyev T., Babayeva R., Aliyev Y.
European Physical Journal B , vol.97, no.6, 2024 (SCI-Expanded) identifier

Study of Raman scattering in As-Se chalcogenide glasses by applying of partial pair correlation functions

Alekberov R., Mekhtiyeva S., Babayeva R., Fabian M., Mammadov S.
INDIAN JOURNAL OF PHYSICS , 2024 (SCI-Expanded) identifier identifier

Electroluminescence in rare-earth doped n-InSe crystal promising for optoelectronics

Babayeva R., Naghiyev T.
MODERN PHYSICS LETTERS B , vol.37, no.21, 2023 (SCI-Expanded) identifier identifier

Photoconductivity of pure and rare-earth doped <i>p</i>-GaSe single crystals

Babayeva R.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B , vol.37, no.14, 2023 (SCI-Expanded) identifier identifier

Extrinsic Photoelectric Effects in Holmium- and Erbium-Doped n-InSe Crystals under Combined Excitation

Abdinov A. S., Babaeva R.
Inorganic Materials , vol.58, no.7, pp.696-700, 2022 (SCI-Expanded) identifier

On the Photoconductivity of <i>p</i>-GaSe⟨REE⟩ Layered Semiconductors and a Multiband Photoreceiver of Light on Their Basis

Abdinov A. S., Babayeva R.
SEMICONDUCTORS , vol.56, no.2, pp.39-42, 2022 (SCI-Expanded) identifier identifier

Electric-Field-Induced Impurity Effects in <i>p</i>-GaSe Single Crystals

Abdinov A. S., Babaeva R.
INORGANIC MATERIALS , vol.57, no.11, pp.1119-1123, 2021 (SCI-Expanded) identifier identifier

Effect of Electric Field on Photoconductivity of <i>p</i>-GaSe Single Crystals

Abdinov A. S., Babaeva R.
RUSSIAN PHYSICS JOURNAL , vol.64, no.2, pp.276-281, 2021 (SCI-Expanded) identifier identifier

Effects of Rare-Earth (Gd and Er) Doping and Electric Field on the Photoconductivity of <i>p</i>-GaSe Single Crystals

Abdinov A. S., Babaeva R.
INORGANIC MATERIALS , vol.57, no.2, pp.119-123, 2021 (SCI-Expanded) identifier identifier

Photoconductivity in polyethylene-semiconductor (p-GaSe) composite

Babayeva R., Abdinov A. S.
MOLECULAR CRYSTALS AND LIQUID CRYSTALS , vol.717, no.1, pp.40-46, 2021 (SCI-Expanded) identifier identifier

Photoelectret effect in polymer-photosensitive semiconductor n-InSe composites

Ziyad D. S., Fikret B. R.
MOLECULAR CRYSTALS AND LIQUID CRYSTALS , vol.717, no.1, pp.47-53, 2021 (SCI-Expanded) Davamlı İnkişaf identifier identifier

Vibrational modes in (TlGaS<sub>2</sub>)<sub><i>x</i></sub>-(TlGaSe<sub>2</sub>)<sub>1-<i>x</i></sub>mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line-shapes

Isik M., TERLEMEZOĞLU BİLMİŞ M., HASANLI N., Babayeva R.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.17, pp.14330-14335, 2020 (SCI-Expanded) Davamlı İnkişaf identifier identifier

DOUBLE ELECTRIC LAYER OF A HELIUM DISCHARGE IN MODULATION MODE

Gusejnov T. K., Rasulov E. A., Babaeva R.
RUSSIAN PHYSICS JOURNAL , vol.62, no.9, pp.1685-1694, 2020 (SCI-Expanded) Davamlı İnkişaf identifier identifier

Temperature-Dependent Photoconductivity of n-InSe Single Crystals

Abdinov A. S., Babaeva R.
Inorganic Materials , vol.55, no.8, pp.758-764, 2019 (SCI-Expanded) identifier

Structural and Optical Properties of Ga<sub>2</sub>Se<sub>3</sub> Crystals by Spectroscopic Ellipsometry

Guler I., Isik M., HASANLI N., Gasanova L. G., Babayeva R.
JOURNAL OF ELECTRONIC MATERIALS , vol.48, no.4, pp.2418-2422, 2019 (SCI-Expanded) identifier identifier

Electroluminescence of p-GaSe⟨REE⟩ Single Crystals

Abdinov A. S., Babaeva R.
INORGANIC MATERIALS , vol.55, no.4, pp.325-330, 2019 (SCI-Expanded) identifier identifier

Peculiarities of Kinetic Coefficients of Single Crystals of a Layered <i>?</i>-GaSe Semiconductor

Abdinov A. S., Babaeva R.
RUSSIAN PHYSICS JOURNAL , vol.61, no.9, pp.1667-1673, 2019 (SCI-Expanded) identifier identifier

Features of the Electron Mobility in the <i>n</i>-InSe Layered Semiconductor

Abdinov A. S., Babayeva R.
SEMICONDUCTORS , vol.52, no.13, pp.1662-1668, 2018 (SCI-Expanded) identifier identifier

On the specific electrophysical properties of <i>n</i>-InSe single crystals

Abdinov A. S., Babaeva R., Rzaev R., Ragimova N. A., Amirova S. I.
SEMICONDUCTORS , vol.50, no.1, pp.34-37, 2016 (SCI-Expanded) identifier identifier

Effect of light on the mobility of free carriers in indium-monoselenide crystals

Abdinov A. S., Babayeva R., Amirova S. I., Ragimova N. A., Rzayev R.
SEMICONDUCTORS , vol.48, no.8, pp.981-985, 2014 (SCI-Expanded) identifier identifier

Effects of temperature and rare-earth doping on the transport properties of GaSe crystals

Abdinov A. S., Babaeva R., Ragimova N. A., Rzaev R., Amirova S. I.
INORGANIC MATERIALS , vol.50, no.4, pp.334-338, 2014 (SCI-Expanded) identifier identifier

Electric-field effect on the electrical conductivity of InSe and InSeaOE©Dy⟩ crystals

Abdinov A. S., Babaeva R., Gasanov Y. G., Ragimova N. A., Rzaev R.
INORGANIC MATERIALS , vol.49, no.12, pp.1180-1186, 2013 (SCI-Expanded) identifier identifier

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

Abdinov A. S., Babayeva R., Amirova S. I., Rzayev R.
SEMICONDUCTORS , vol.47, no.8, pp.1013-1017, 2013 (SCI-Expanded) Davamlı İnkişaf identifier identifier

Electric field effect on photoconductivity decay in <i>n</i>-InSe single crystals

Abdinov A. S., Babaeva R., Rzaev R.
INORGANIC MATERIALS , vol.48, no.8, pp.781-785, 2012 (SCI-Expanded) identifier identifier

Temperature dependence of carrier mobility in undoped and gadolinium-doped <i>p</i>-GaSe crystals

Abdinov A. S., Babaeva R., Rzaev R., Amirova S. I.
INORGANIC MATERIALS , vol.48, no.6, pp.559-562, 2012 (SCI-Expanded) identifier identifier

Dependence of carrier mobility on an electric field in gallium selenide crystals

Abdinov A., Babaeva R., Rzayev R.
SEMICONDUCTORS , vol.46, pp.730-735, 2012 (SCI-Expanded)

Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals

Abdinov A., Allakhverdiev S., Babaeva R., Rzaev R.
INORGANIC MATERIALS , vol.45, pp.723-727, 2009 (SCI-Expanded)

Effect of rare-earth doping on the electrical properties of InSe single crystals

Abdinov A., Babaeva R., Bagirova A., Rzaev R.
INORGANIC MATERIALS , vol.42, pp.937-941, 2006 (SCI-Expanded)

Photoluminescence of rare-earth-doped InSe and GaSe single crystals

Abdinov A., Babaeva R., Rzaev R., Gasanov G.
INORGANIC MATERIALS , vol.40, pp.567-569, 2004 (SCI-Expanded)

Photoelectric behavior of GaSe single crystals doped with Dy

Abdinov A., Babaeva R., Dzhafarov M., Rzaev R., Ragimova N.
INORGANIC MATERIALS , vol.35, pp.325-327, 1999 (SCI-Expanded)

Effect of Dy Doping on the Photoelectric Properties of GaSe Single Crystals

Abdinov A., Babaeva R., Dzhafarov M., Nurullaev Y., Rzaev R.
INORGANIC MATERIALS , vol.34, no.3, pp.205-206, 1998 (SCI-Expanded)
Digər jurnallardakı nəşrlər

Elements of optoelectronics based on p-gase<er> crystals

Abdinov A., Babayeva R.
International Journal on Technical and Physical Problems of Engineering , vol.13, no.2, pp.82-86, 2021 (Scopus) identifier

Flexible photocells based on layered AIIIBVI semiconductor compounds

Abdinov A. S., Babayeva R.
International Journal on Technical and Physical Problems of Engineering , vol.11, no.3, pp.23-27, 2019 (Scopus) identifier

Photodetectors for UV and visible ranges based on the monogallium selenide crystals

Abdinov A., Babayeva R., Ragimova N., Rasulov E.
Applied Physics , vol.2016-January, no.6, pp.72-76, 2016 (Scopus) identifier

The IR-radiation receivers on a basis of gallium monoselenide

Abdinov A., Amirova S., Babayeva R., Ragimova N.
Applied Physics , vol.2015-January, no.5, pp.75-79, 2015 (Scopus) identifier

Multifunctional photodetectors based on the n-InSe crystals

Abdinov A., Mehtiyev N., Babayeva R., Rzayev R.
Applied Physics , no.6, pp.76-80, 2014 (Scopus) identifier

Resistivity Oscillations in InSe[removed] Single Crystals

Abdinov A., Babaeva R., Nurullaev Y.
INORGANIC MATERIALS , vol.32, pp.1265-1266, 1996 (Scopus)

ACCUMULATION OF WEAK OPTICAL SIGNALS AND SPECTRAL MEMORY IN INSE[DY] SINGLE-CRYSTALS

Abdinov A., Babaeva R.
INORGANIC MATERIALS , vol.31, pp.822-823, 1995 (Peer-Reviewed Journal)

SLOW ISOTHERMAL RELAXATION OF DARK RESISTANCE IN DYSPROSIUM-DOPED INDIUM SELENIDE SINGLE-CRYSTALS

Abdinov A., Babaeva R.
INORGANIC MATERIALS , vol.31, pp.939-941, 1995 (Peer-Reviewed Journal)

AN IMPURITY PHOTOEFFECT IN PARTIALLY DISORDERED INSE CRYSTALS DOPED WITH DY

Abdinov A., Babaeva R.
INORGANIC MATERIALS , vol.30, pp.820-823, 1994 (Peer-Reviewed Journal)

TRANSITION RELAXATION OF DARK CURRENT IN PURE AND DOPED INDIUM SELENIDE CRYSTALS

Abdinov A., Babaeva R.
INORGANIC MATERIALS , vol.30, pp.323-325, 1994 (Peer-Reviewed Journal)
Konqres/Seminar Təqdimatları Üzrə Rəylə Nəşr Edilən Nəşrlər

Induced electronic phenomena in crystals of p-GaSe semiconductor promising for optoelectronics

Babayeva R.
International Conference PhysicA.SPb/2021, Saint Petersburg, Russia, 18 - 22 October 2021, vol.2103 identifier

Photo-e.m.f. at a metal/layered n-InSe semiconductor contact under heating conditions of current carriers by an electric field

Abdinov A., Babayeva R.
International Conference PhysicA.SPb/2021, Saint Petersburg, Russia, 18 - 22 October 2021, vol.2103 identifier

Thermo-e.m.f. Of hot current carriers in non-doped and doped crystals of a layered semiconductor n-InSe

Abdinov A. S., Babayeva R.
International Conference PhysicA.SPb 2020, Saint Petersburg, Russia, 19 - 23 October 2020, vol.1697 identifier

Effect of random macroscopic defects on kinetic phenomena in a layered semiconductor n-InSe with strong electric fields

Abdinov A. S., Babayeva R.
International Conference on PhysicA.SPb, Saint Peter, Guernsey And Alderney, 22 - 24 October 2019 identifier identifier

Incommensurate Phase Transition and Electronic Properties of BaMnF<sub>4</sub>

PALAZ S., ŞİMŞEK Ş., KOÇ H., Babayeva R., Mamedov A. M., ÖZBAY E.
5th International Conference on Competitive Materials and Technology Processes (ic-cmtp), Miskolc-Lillafured, Hungary, 8 - 12 October 2018 Davamlı İnkişaf identifier identifier

Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements

Abdinov A., Babayeva R., Bagirova A., Rzaev R.
Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 23 - 26 May 2006, vol.6636, pp.66360-70612

Photoelectric properties of isotype heterojunctions n-InSe〈REE〉/ n-CuInSe2 in visible and near IR-region

Abdinov A., Babayeva R., Ismayilov R., Eyvazova G.
18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.260-263

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals

Abdinov A., Babayeva R., Rzayev R., Eyvazova G.
18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.299-303

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

Abdinov A., Babayeva R., Ragimova N., Rzayev R., Eyvazova G.
Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

, Babayeva R.
17th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

Abdinov A., Babayeva R., Ragimova N., Rzayev R., Eyvazova G.
Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385

Photoconductivity of Cd1-xZnxSe films in IR region deposited from solution

Abdinov A. S., Jafarov M. A., Babayeva R., Nasirov E. F., Mamedov H. M.
Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 25 - 27 May 2000, vol.4340, pp.112-116
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Nəşr

55

İstinad (WoS)

197

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10

İstinad (Scopus)

207

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10

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11
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