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Photo-e.m.f. at a metal/layered n-InSe semiconductor contact under heating conditions of current carriers by an electric field

International Conference PhysicA.SPb/2021, Saint Petersburg, Russia, 18 - 22 October 2021, vol.2103, (Full Text) identifier

Induced electronic phenomena in crystals of p-GaSe semiconductor promising for optoelectronics

International Conference PhysicA.SPb/2021, Saint Petersburg, Russia, 18 - 22 October 2021, vol.2103, (Full Text) identifier

Thermo-e.m.f. Of hot current carriers in non-doped and doped crystals of a layered semiconductor n-InSe

International Conference PhysicA.SPb 2020, Saint Petersburg, Russia, 19 - 23 October 2020, vol.1697, (Full Text) identifier

Effect of random macroscopic defects on kinetic phenomena in a layered semiconductor n-InSe with strong electric fields

International Conference on PhysicA.SPb, Saint Peter, Guernsey And Alderney, 22 - 24 October 2019, (Full Text) identifier identifier

Incommensurate Phase Transition and Electronic Properties of BaMnF<sub>4</sub>

5th International Conference on Competitive Materials and Technology Processes (ic-cmtp), Miskolc-Lillafured, Hungary, 8 - 12 October 2018, (Full Text) Davamlı İnkişaf identifier identifier

DEPENDENCE OF PHOTOCONDUCTIVITY ON THE ELECTRICAL FIELD IN n-InSe

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 1 - 03 May 2019, pp.20-23, (Full Text) identifier

INFLUENCE OF EXTERNAL AND INTRACRYSTALLINE FACTORS ON THE MOBILITY OF CHARGE MEDIA IN n-InSe SINGLE CRYSTALS

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 1 - 03 May 2019, pp.24-26, (Full Text) identifier

Anomalies of the kinetic phenomena in semiconducting A<SUP>III</SUP>B<SUP>VI</SUP> compounds with a layered crystalline structure

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 20 - 22 April 2017, pp.58-60, (Full Text) identifier

Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 23 - 26 May 2006, vol.6636, pp.66360-70612, (Full Text)

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.299-303, (Full Text) identifier

Photoelectric properties of isotype heterojunctions n-InSe〈REE〉/ n-CuInSe2 in visible and near IR-region

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.260-263, (Full Text) identifier

Photoelectric properties of isotype heterojunctions n-InSe〈REE〉/ n-CuInSe2 in visible and near IR-region

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.260-263, (Full Text)

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.299-303, (Full Text)

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

17th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text)

Photoconductivity of Cd1-xZnxSe films in IR region deposited from solution

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 25 - 27 May 2000, vol.4340, pp.112-116, (Full Text)
Ölçülər

Nəşr

70

İstinad (WoS)

170

H-indexi (WoS)

9

İstinad (Scopus)

219

H-indexi (Scopus)

10

İstinad (Scholar)

336

H-indexi (Scholar)

11

İstinad (Digər Cəmi)

199

Ümumi İstinad Sayısı

470

Açıq giriş

2
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