Nəşrlər və əsərlər

SCI, SSCI və AHCI tərəfindən indekslənmiş dərc edilmiş jurnal məqalələri 34
Digər jurnallardakı nəşrlər 65
Referensiya edilmiş Elmi İclaslarda dərc olunmuş məqalələr 15

Induced electronic phenomena in crystals of p-GaSe semiconductor promising for optoelectronics

International Conference PhysicA.SPb/2021, Saint Petersburg, Russia, 18 - 22 October 2021, vol.2103, (Full Text) identifier

Photo-e.m.f. at a metal/layered n-InSe semiconductor contact under heating conditions of current carriers by an electric field

International Conference PhysicA.SPb/2021, Saint Petersburg, Russia, 18 - 22 October 2021, vol.2103, (Full Text) identifier

Thermo-e.m.f. Of hot current carriers in non-doped and doped crystals of a layered semiconductor n-InSe

International Conference PhysicA.SPb 2020, Saint Petersburg, Russia, 19 - 23 October 2020, vol.1697, (Full Text) identifier

DEPENDENCE OF PHOTOCONDUCTIVITY ON THE ELECTRICAL FIELD IN n-InSe

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 1 - 03 May 2019, pp.20-23, (Full Text) identifier

Incommensurate Phase Transition and Electronic Properties of BaMnF<sub>4</sub>

5th International Conference on Competitive Materials and Technology Processes (ic-cmtp), Miskolc-Lillafured, Hungary, 8 - 12 October 2018, (Full Text) Davamlı İnkişaf identifier identifier

Effect of random macroscopic defects on kinetic phenomena in a layered semiconductor n-InSe with strong electric fields

International Conference on PhysicA.SPb, Saint Peter, Guernsey And Alderney, 22 - 24 October 2019, (Full Text) identifier identifier

INFLUENCE OF EXTERNAL AND INTRACRYSTALLINE FACTORS ON THE MOBILITY OF CHARGE MEDIA IN n-InSe SINGLE CRYSTALS

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 1 - 03 May 2019, pp.24-26, (Full Text) identifier

Anomalies of the kinetic phenomena in semiconducting A<SUP>III</SUP>B<SUP>VI</SUP> compounds with a layered crystalline structure

International Conference on Modern Trends in Physics, Baku, Azerbaijan, 20 - 22 April 2017, pp.58-60, (Full Text) identifier

Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 23 - 26 May 2006, vol.6636, pp.66360-70612, (Full Text)

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.299-303, (Full Text) identifier

Photoelectric properties of isotype heterojunctions n-InSe〈REE〉/ n-CuInSe2 in visible and near IR-region

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.260-263, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

17th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text)

Photoconductivity of Cd1-xZnxSe films in IR region deposited from solution

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 25 - 27 May 2000, vol.4340, pp.112-116, (Full Text)
Digər nəşrlər 33
Ölçülər

Nəşr

148

İstinad (WoS)

170

H-indexi (WoS)

9

İstinad (Scopus)

230

H-indexi (Scopus)

10

İstinad (Scholar)

336

H-indexi (Scholar)

11

İstinad (Digər Cəmi)

201

Ümumi İstinad Sayısı

543

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2
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