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Photodetectors for visible and near infra-red region with controlled sensitivity on the basis of p-GaSe single crystals doped by rare-earth elements

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 23 - 26 May 2006, vol.6636, pp.66360-70612, (Full Text)

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals

18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.299-303, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

17th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 27 - 31 May 2002, vol.5126, pp.381-385, (Full Text) identifier

Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

Proceedings of SPIE - The International Society for Optical Engineering, Moscow, Russia, 15 - 20 April 2002, vol.5126, pp.381-385, (Full Text)
Ölçülər

Nəşr

158

İstinad (WoS)

245

H-indexi (WoS)

12

İstinad (Scopus)

333

H-indexi (Scopus)

12

İstinad (Scholar)

483

H-indexi (Scholar)

13

Ümumi İstinad Sayısı

829

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8
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